| Transmission Range | 0.9 to 16 μm |
| Refractive Index | 3.2727 at 10.33 μm (1) |
| Reflection Loss | 44% at 10.33 μm (2 surfaces) |
| Absorption Coefficient | 0.01 cm-1 |
| Reststrahlen Peak | n/a |
| dn/dT | 147 x 10-6 K-1 @ 10μm (4) |
| dn/dμ = 0 | 0.63 μm |
| Density | 5.315 g/cc |
| Melting Point | 1511°C |
| Thermal Conductivity | 48 W m-1 K-1 @ 273 K |
| Thermal Expansion | 5.7 x 10-6/°C @ 300 K (3) |
| Hardness | Knoop 750 |
| Specific Heat Capacity | 360 J Kg-1 K-1 |
| Dielectric Constant | 12.91 at low frequencies |
| Youngs Modulus (E) | 84.8 GPa |
| Shear Modulus (G) | n/a |
| Bulk Modulus (K) | 75.5 GPa |
| Elastic Coefficients | n/a |
| Apparent Elastic Limit | 71.9 MPa |
| Poisson Ratio | 0.31 |
| Solubility | Insoluble in water |
| Molecular Weight | 144.64 |
| Class/Structure | Cubic ZnS, F43m , cleaves on (100) |
| μm | No |
|---|---|
| 1.033 | 3.492 |
| 1.550 | 3.3737 |
| 2.066 | 3.338 |
| 2.480 | 3.324 |
| 3.100 | 3.3125 |
| 4.133 | 3.3027 |
| 4.959 | 3.2978 |
| 6.199 | 3.2921 |
| 7.239 | 3.2874 |
| 8.266 | 3.2831 |
| 9.537 | 3.2769 |
| 10.33 | 3.2727 |
| 11.27 | 3.2671 |
| 12.40 | 3.2597 |
| 13.78 | 3.2493 |
| 15.50 | 3.2301 |
| 17.71 | 3.2081 |
| 19.07 | 3.1866 |
Gallium Arsenide is produced by Czochralski or horizontal Bridgeman crystal growth techniques. As it is arsenic bearing, precautions in handling and working should be observed.
REFERENCES:
(1) Handbook Optical Constants, ed Palik, V1, ISBN 0-12-544420-6
(2) Deutch, J.Electron. Mater. V4 p679
(3) Sze, Physics of Semiconductor Devices, Wiley 1981
(4) M.Cadona. Proc. Int Conf. Semi. Phys. 1960 p.388. Note: dn/dT = n x (4.5 +/-0.2)x10-5 °K-1